Method of fin oxidation by flowable oxide fill and steam anneal to mitigate local layout effects

ABSTRACT

Integrated chips and methods of forming the same include oxidizing a portion of a semiconductor fin, which includes a channel layer and an intermediate semiconductor layer, to electrically isolate active regions of the semiconductor fin by forming an oxide that fully penetrates the channel layer and the intermediate semiconductor layer. A semiconductor device is formed on each of the active regions.

BACKGROUND Technical Field

The present invention generally relates to transistor fabrication and,more particularly, to the fabrication of fin field effect transistorswithout using fin cut processes.

Description of the Related Art

Fin field effect transistors (FinFETs) provide a flexible platform forscaling device sizes. Some existing processes fabricate multiple FinFETsat once by creating a long fin and then cutting that fin into multiplesections with an etch. However, local layout effects arise as a resultof such fin cuts, causing a lack of uniformity between devices.

SUMMARY

A method of forming an integrated chip includes oxidizing a portion of asemiconductor fin, which includes a channel layer and an intermediatesemiconductor layer, to electrically isolate active regions of thesemiconductor fin by forming an oxide that fully penetrates the channellayer and the intermediate semiconductor layer. A semiconductor deviceis formed on each of the active regions.

A method of forming an integrated chip includes forming a semiconductorfin that includes a silicon germanium fin formed on a silicon fin. Aportion of the silicon fin is selectively isotropically etched to thinthe silicon thin relative to the silicon germanium fin. A portion of thesilicon germanium fin and the thinned portion of the silicon fin areoxidized to electrically isolate active regions of the semiconductor finwithout releasing stress in the silicon germanium fin, completelypenetrating the portion of the silicon germanium fin and the siliconfin, such that the portion of the silicon germanium fin and the siliconfin is converted to a dielectric material without any conductive pathbetween the active regions. A semiconductor device is formed on each ofthe active regions.

An integrated chip includes a semiconductor fin that has a first activeregion and a second active region that are electrically separated by anoxide region that completely penetrates the semiconductor fin. A firstsemiconductor device is formed on the first active region. A secondsemiconductor device is formed on the second active region.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following description will provide details of preferred embodimentswith reference to the following figures wherein:

FIG. 1 is a cross-sectional diagram of a step in the fabrication of anintegrated chip that shows the formation of a semiconductor fin inaccordance with an embodiment of the present invention;

FIG. 2 is a cross-sectional diagram of a step in the fabrication of anintegrated chip that shows the formation of a mask on the semiconductorfin that exposes a region of the semiconductor fin in accordance with anembodiment of the present invention;

FIG. 3 is a cross-sectional diagram of a step in the fabrication of anintegrated chip that shows the oxidation of a region of thesemiconductor fin in accordance with an embodiment of the presentinvention;

FIG. 4 is a cross-sectional diagram of a step in the fabrication of anintegrated chip that shows the formation of dummy gate structures on thesemiconductor fin in accordance with an embodiment of the presentinvention;

FIG. 5 is a cross-sectional diagram of a step in the fabrication of anintegrated chip that shows the formation of a mask on the semiconductorfin and dummy gate structures that exposes a region of the semiconductorfin in accordance with an embodiment of the present invention;

FIG. 6 is a cross-sectional diagram of a step in the fabrication of anintegrated chip that shows the oxidation of a region of thesemiconductor fin in accordance with an embodiment of the presentinvention;

FIG. 7 is a cross-sectional diagram of a step in the fabrication of anintegrated chip that shows the formation of source/drain regions on asemiconductor fin in accordance with an embodiment of the presentinvention;

FIG. 8 is a cross-sectional diagram of a step in the fabrication of anintegrated chip that shows the formation of a mask on the semiconductorfin that exposes a region of the semiconductor fin in accordance with anembodiment of the present invention;

FIG. 9 is a cross-sectional diagram of a step in the fabrication of anintegrated chip that shows the oxidation of a region of thesemiconductor fin in accordance with an embodiment of the presentinvention;

FIG. 10 is a block/flow diagram of a method of forming an integratedchip with improved process uniformity in accordance with an embodimentof the present invention;

FIG. 11 is a cross-sectional diagram of a step in the fabrication of anintegrated chip that shows the oxidation of a region of thesemiconductor fin after formation of source/drain regions and beforeremoval of the dummy gate structures in accordance with an embodiment ofthe present invention;

FIG. 12 is a cross-sectional diagram of a step in the oxidation of asemiconductor fin in accordance with an embodiment of the presentinvention;

FIG. 13 is a cross-sectional diagram of a step in the oxidation of asemiconductor fin in accordance with an embodiment of the presentinvention; and

FIG. 14 is a cross-sectional diagram of a step in the oxidation of asemiconductor fin in accordance with an embodiment of the presentinvention.

DETAILED DESCRIPTION

Embodiments of the present invention avoid local layout effects byoxidizing sections of the fin, creating electrically isolated regionswithout creating local layout effects. In particular, the presentembodiments make it possible to form fin field effect transistor(FinFET) devices that have uniform electronic properties. An oxidationprocess is used that uses a steam process to drive oxygen from aflowable oxygen layer into a semiconductor layer, creating an oxideregion that electrically isolates the regions without affecting theelectrical properties of the neighboring devices.

One property in particular that is addressed by the present embodimentsis the stress within the channel material of a FinFET. In silicongermanium devices in particular, being formed on a silicon base createsa stress within the channel layer that affects the threshold voltage ofthe device. This stress, and hence also the threshold voltage, can betuned according to design parameters. However, etching such a channellayer to perform a fin cut releases part of the stress in the material,causing unpredictable deviations from the designed devicecharacteristics.

The present embodiments therefore create electrical isolation betweenadjacent FinFETs by selectively oxidizing regions of the fin. Thisoxidation converts the exposed regions to dielectric materials withoutreleasing the stress in the neighboring semiconductors. The presentembodiments show four distinct phases of the fabrication process inwhich the oxidation may be performed, all following the same principles.A specific oxidation process is employed that deposits a flowable oxideand uses a steam anneal to drive oxygen into the exposed semiconductormaterial, creating an insulator between active device regions.

Referring now to FIG. 1, a step in a first embodiment of the electricalisolation of regions of a fin, without a fin cut, by oxidizing a portionof the fin is shown. A channel fin 106 is formed on an intermediatelayer 104, which in turn is formed on a substrate 102. The substrate 102may be a bulk-semiconductor substrate. In one example, thebulk-semiconductor substrate may be a silicon-containing material.Illustrative examples of silicon-containing materials suitable for thebulk-semiconductor substrate include, but are not limited to, silicon,silicon germanium, silicon germanium carbide, silicon carbide,polysilicon, epitaxial silicon, amorphous silicon, and multi-layersthereof. Although silicon is the predominantly used semiconductormaterial in wafer fabrication, alternative semiconductor materials canbe employed, such as, but not limited to, germanium, gallium arsenide,gallium nitride, cadmium telluride, and zinc selenide. Although notdepicted in the present figures, the substrate 102 may also be asemiconductor on insulator (SOI) substrate.

Although it is specifically contemplated that the substrate 102 may be asemiconductor substrate, for compatibility with existing processes, itshould be understood that nothing in the present embodiments relies onsemiconducting properties in the substrate 102. As a result, thesubstrate 102 may be formed from dielectric materials instead ofsemiconductor materials.

The intermediate layer 104 is specifically contemplated as being, forexample, a silicon layer, but it should be understood that anyappropriate semiconductor material may be used instead. In someembodiments the intermediate layer 104 may be omitted entirely, while instill other embodiments the intermediate layer 104 may be replaced witha silicon dioxide layer.

The channel fin 106 is formed from any appropriate semiconductormaterial. It is specifically contemplated that silicon germanium may beused, but it should be understood that other compatible semiconductormaterials, such as silicon or germanium, may be used instead. A layer ofchannel material is patterned and etched to form channel fin 106. Thecross-section of FIG. 1 shows a section of the structure taken parallelto the channel fin 106. It should be understood that a silicon germaniumchannel fin 106 formed on a silicon intermediate layer 104 will producestress within the silicon germanium channel fin 106 that can be selectedto tune device properties such as, e.g., threshold voltage. Otherembodiments may use, for example, a silicon channel layer 106 formed ona silicon dioxide intermediate layer 104. Although such embodiments donot exhibit significant stress effects, application of the presentprinciples nonetheless provides superior process uniformity.

It is specifically contemplated that the channel fin 106 may be formedby an appropriate anisotropic etch, such as reactive ion etching (RIE).RIE is a form of plasma etching in which during etching the surface tobe etched is placed on the RF powered electrode. Moreover, during RIEthe surface to be etched takes on a potential that accelerates theetching species extracted from plasma toward the surface, in which thechemical etching reaction is taking place in the direction normal to thesurface. Other examples of anisotropic etching that can be used at thispoint of the present invention include ion beam etching, plasma etchingor laser ablation. Alternatively, the channel fin 106 can be formed by aspacer imaging transfer process.

The particular materials described above are selected because of thecompatibility of their respective crystalline structures. Specifically,silicon, germanium, and silicon germanium with varying germaniumconcentrations have similar crystalline structures with slightlydifferent spacing between the component atoms. This relationship betweenthe materials makes it possible to epitaxially grow a layer of onematerial directly on a surface of another material, providing a singlecrystal with multiple layers.

The terms “epitaxial growth” and “epitaxial deposition” refer to thegrowth of a semiconductor material on a deposition surface of asemiconductor material, in which the semiconductor material being grownhas substantially the same crystalline characteristics as thesemiconductor material of the deposition surface. The term “epitaxialmaterial” denotes a material that is formed using epitaxial growth. Insome embodiments, when the chemical reactants are controlled and thesystem parameters set correctly, the depositing atoms arrive at thedeposition surface with sufficient energy to move around on the surfaceand orient themselves to the crystal arrangement of the atoms of thedeposition surface. Thus, in some examples, an epitaxial film depositedon a {100} crystal surface will take on a {100} orientation.

Crystalline orientation refers to the ordered arrangement atoms in aparticular crystal structure along a given surface. In one example,silicon forms a “face-centered diamond-cubic” crystal structure, andcutting a silicon crystal along different planes will result indiffering patterns of atoms being presented along the surface that isproduced. These patterns are identified with Miller indices (e.g.,<100>, <111>, etc), with different Miller indices corresponding todifferent crystalline orientations. Different crystalline orientationswill have different properties during certain processes, such as etchesand epitaxial growth.

A result of the different spacing between the atoms of differentmaterials in such a crystal is that the materials will experience stressat their interfaces. In particular, a thick layer of silicon will causea relatively thin layer of silicon germanium to be under stress as theatoms of the silicon germanium layer conform to the crystallinestructure of the thick silicon layer. Conversely, a thick layer ofsilicon germanium will experience relatively little stress at aninterface with a relatively thin layer of silicon, as its internalstructure will be closer to its natural state. Different levels ofstrain in a silicon germanium layer will produce different electronicproperties in a transistor device by, for example, changing thethreshold voltage of the transistor.

In view of the above, it should be understood that other materials maybe used instead of the recited silicon and silicon germanium. It isspecifically contemplated that, for example, germanium may besubstituted for one or more of the layers in question. It should also beunderstood that any other set of materials may be used instead if theyhave compatible crystalline structures.

Although not shown in the figures, a layer of dielectric material may beconformally deposited and subsequently anisotropically etched to formfin sidewalls that leave the top surface of the channel fin 106 exposed.The sidewalls may be formed from, e.g., silicon nitride or any otherappropriate dielectric material and protect the channel fin 106 fromhorizontal oxidation during subsequent oxidation processes. Thedeposition of such sidewalls may be performed at any point in theprocess before the relevant oxidation.

It should be understood that, although the present embodiments aredescribed in the context of a single diffusion break layout, the presentstructures and processes may also be applied to dual diffusion breaklayouts.

Referring now to FIG. 2, a step in a first embodiment of the electricalisolation of regions of a fin, without a fin cut, by oxidizing a portionof the fin is shown. A mask 202 is formed over the channel fin 106. Themask may be formed photolithographically, leaving exposed a portion 204of channel fin 106. A shallow trench isolation (STI) region between finsaround the portion 204 is recessed to expose sidewalls of layer 104. Theexposed portions of 104 and 106 are be oxidized as described below. Theportion 204 is thus positioned between active device regions of thechannel fin 106. It is specifically contemplated that a hardmaskmaterial, such as silicon nitride, may be used to form the mask 202, butit should be understood that any appropriate material that will not bedamaged by the subsequent oxidation process may be used instead.

Referring now to FIG. 3, a step in a first embodiment of the electricalisolation of regions of a fin, without a fin cut, by oxidizing a portionof the fin is shown. An oxidation process is performed that creates anoxidized region 302 that fully penetrated exposed portion 204 of channelfin 106 as well as the intermediate layer 104. This oxidized region 302provides electrical isolation between the unexposed portions of thechannel fin 106. Any appropriate oxidation process may be usedincluding, e.g., dry oxidation, wet oxidation, or any thermal oxidationprocess.

In the specific embodiment where silicon germanium is used for thechannel layer 106, the oxidation process deposits a layer of flowableoxide material, such as silicon dioxide, and uses a steam anneal tocause the underlying semiconductor material to oxidize, forcing thegermanium of the silicon germanium channel material to move out withoutsubstantially altering the stress in the channel fin 106.

After the formation of the oxidized region 302, the mask 204 can beremoved by any appropriate selective etch process. As used herein, theterm “selective” in reference to a material removal process denotes thatthe rate of material removal for a first material is greater than therate of removal for at least another material of the structure to whichthe material removal process is being applied. Thus, individual layerscan be selectively removed without substantially damaging the otherlayers.

At this point, subsequent processing steps may be performed to finish aset of FinFET devices. In particular, it is contemplated thatsource/drain regions may be formed on the channel fin 106 by anyappropriate process such as, e.g., dopant implantation or epitaxialgrowth. A gate stack may be formed over the fin, including a gatedielectric and a gate conductor. Electrical contacts to the source/drainregion and to the gate conductor may be formed by any appropriateprocess.

Referring now to FIG. 4, a step in a second embodiment of the electricalisolation of regions of a fin, without a fin cut, by oxidizing a portionof the fin is shown. In this embodiment, oxidation of the fin isperformed after formation of dummy gate structures 402. The dummy gatestructures 402 may be formed by any appropriate process, such as ananisotropic etch or sidewall image transfer. The dummy gate structures402 may include, for example, a dummy gate dielectric formed from, e.g.,silicon dioxide, and a dummy gate formed from, e.g., polysilicon.Spacers 404 are formed from any appropriate hardmask material such as,e.g., silicon nitride, using any appropriate conformal process such as,e.g., CVD or ALD. The dummy gate structures 402 may furthermore includeother structures such as, e.g., masks remaining from a photolithographyprocess and any other incidental layers or materials that may resultfrom the fabrication of the dummy gate structures 402.

Referring now to FIG. 5, a step in a second embodiment of the electricalisolation of regions of a fin, without a fin cut, by oxidizing a portionof the fin is shown. A mask 502 is formed over the dummy gate structures402 and spacers 404 with a gap 504 that exposes at least one portion 506of the channel fin 106 that is to be oxidized. The spacers 404 areetched away from horizontal surfaces using an appropriate anisotropicetch. As above, the mask 502 may be formed photolithographically. Theportion 506 is thus positioned between active device regions of thechannel fin 106. It is specifically contemplated that a hardmaskmaterial, such as silicon nitride, may be used to form the mask 502, butit should be understood that any appropriate material that will not bedamaged by the subsequent oxidation process may be used instead.

Referring now to FIG. 6, a step in a second embodiment of the electricalisolation of regions of a fin, without a fin cut, by oxidizing a portionof the fin is shown. A shallow trench isolation (STI) region betweenfins around the portion 504 is recessed to expose sidewalls of layer404. The exposed portions of 104 and 106 are be oxidized. The oxidationprocess is performed that creates an oxidized region 602 that fullypenetrated exposed portion 506 of channel fin 106 and the underlyingintermediate layer 104 as described below. This oxidized region 602provides electrical isolation between the unexposed portions of thechannel fin 106.

After the formation of the oxidized region 602, the mask 502 can beremoved by any appropriate selective etch process. At this point,subsequent processing steps may be performed to finish a set of FinFETdevices. In particular, it is contemplated that source/drain regions maybe formed on the channel fin 106 by any appropriate process such as,e.g., dopant implantation or epitaxial growth. The dummy gate structure402 may be replaced by a final gate structure in, e.g., a replacementmetal gate process. A gate stack may thereby be formed over the fin,including a gate dielectric and a gate conductor. Electrical contacts tothe source/drain region and to the gate conductor may be formed by anyappropriate process.

Referring now to FIG. 7, a step in a third embodiment of the electricalisolation of regions of a fin, without a fin cut, by oxidizing a portionof the fin is shown. In this embodiment, the oxidation is performedafter the formation of source/drain regions 702 and the removal of dummygate structures. The source/drain regions 702 have been formed on thechannel fin 106 by, for example, epitaxial growth and are doped in situor through implantation. A passivating layer 704 of, e.g., silicondioxide or any other appropriate dielectric material is formed over thesource/drain regions 702. A set of gate sidewalls 708 remain afterremoval of the dummy gate structures, leaving open gaps 706 that exposechannel regions of the channel fin 106.

Referring now to FIG. 8, a step in a third embodiment of the electricalisolation of regions of a fin, without a fin cut, by oxidizing a portionof the fin is shown as described below. A mask 802 is formed over thesource/drain regions 702 and sidewalls 708, with a gap 806 that exposesat least one portion 804 of the channel fin 106 that is to be oxidized.A shallow trench isolation (STI) region between fins around the portion804 is recessed to expose. The exposed portions of 104 and 106 are beoxidized. As above, the mask 802 may be formed photolithographically orby any other appropriate process. The portion 804 is thus positionedbetween active device regions of the channel fin 106. Although the mask802 is shown as being formed to leave open space to the sides of thesource/drain regions 702, it should be understood that the mask 802 mayalternatively be formed with edges that land on top of respectivesource/drain regions 702, such that any exposed portions 804 are shownas being defined by the separation between adjacent source/drain regions702, which is applicable to both single diffusion break and dualdiffusion break layouts.

It is specifically contemplated that a hardmask material, such assilicon nitride, may be used to form the mask 802, but it should beunderstood that any appropriate material that will not be damaged by thesubsequent oxidation process may be used instead and that the materialfor the mask 802 should have etch selectivity with the sidewalls 708.

Referring now to FIG. 9, a step in a third embodiment of the electricalisolation of regions of a fin, without a fin cut, by oxidizing a portionof the fin is shown. An oxidation process is performed that creates anoxidized region 902 that fully penetrates exposed portion 804 of channelfin 106 and the underlying intermediate layer 104. This oxidized region902 provides electrical isolation between the unexposed portions of thechannel fin 106.

After formation of the oxidized region 902, the mask 802 can be removedby any appropriate selective etch process. At this point, subsequentprocessing steps may be performed to finish a set of FinFET devices. Inparticular, it is contemplated that the gaps between sidewalls 708 maybe filled with a final gate structure in, e.g., a replacement metal gateprocess. A gate stack may thereby be formed over the fin 106, includinga gate dielectric and a gate conductor. Electrical contacts to thesource/drain region and to the gate conductor may be formed by anyappropriate process.

Referring now to FIG. 11, a step in a fourth embodiment of theelectrical isolation of regions of a fin, without a fin cut, byoxidizing a portion of the fin is shown. In this embodiment, theoxidation is performed after formation of source/drain regions 702, butbefore removal of the dummy gate structures 402. The source/drainregions 702 may be inhibited from growing in certain regions of thechannel fin 106 by masking those regions, thereby leaving the channelfin 106 exposed. A mask 1102 can then be formed over the source/drainregions 702 to leave exposed portions of the channel fin 106 foroxidation, forming oxidized regions 1104.

It is to be understood that aspects of the present invention will bedescribed in terms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps can be varied within the scope of aspects of the presentinvention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements can also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements can be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present embodiments can include a design for an integrated circuitchip, which can be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer can transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein can be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case, the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case, the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., SiGe. These compounds includedifferent proportions of the elements within the compound, e.g., SiGeincludes Si_(x)Ge_(1-x) where x is less than or equal to 1, etc. Inaddition, other elements can be included in the compound and stillfunction in accordance with the present principles. The compounds withadditional elements will be referred to herein as alloys.

Reference in the specification to “one embodiment” or “an embodiment”,as well as other variations thereof, means that a particular feature,structure, characteristic, and so forth described in connection with theembodiment is included in at least one embodiment. Thus, the appearancesof the phrase “in one embodiment” or “in an embodiment”, as well anyother variations, appearing in various places throughout thespecification are not necessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This can be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

The terminology used herein is for the purpose of describing particularembodiments acrd is not intended to be limiting of example embodiments.As used herein, the singular forms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises,”“comprising,” “includes” and/or “including,” when used herein, specifythe presence of stated features, integers, steps, operations, elementsand/or components, but do not, preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components and/or groups thereof.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, can be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or features) as illustrated in the FIGS. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the FIGS. For example, if the device in theFIGS. is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass pass both anorientation of above and below. The device can be otherwise oriented(rotated 90 degrees or at other orientations), and the spatiallyrelative descriptors used herein can be interpreted accordingly. Inaddition, it will also be understood that when a layer referred to asbeing “between” two layers, it can be the only layer between the twolayers intervening layers can also be presnt.

It will be understood that, although the terms first, second, etc. canbe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, a first element discussed belowcould be termed a second element without departing from the scope of thepresent concept.

Referring now to FIG. 10, a method of forming a FinFET is shown. Themethod that is shown includes a step of oxidizing a portion of asemiconductor fin, illustrated with a dashed line, that can be performedat different points in the process. Although it is specificallycontemplated that the oxidization step will be performed only once, itshould be understood that multiple oxidation steps may be performed atdifferent points in the fabrication process.

Block 1002 forms semiconductor fin 106. As noted above, thesemiconductor fin 106 may be formed on an intermediate layer 104 over asubstrate 102 by any appropriate mechanism including, e.g.,photolithographic masking and an anisotropic etch or sidewall imagetransfer. Block 1003 optionally deposits protective fin sidewalls toprotect the fin from horizontal oxidation. This step is shown as beingperformed before the oxidation of block 1004 but may, alternatively, beperformed at any point in the process before an oxidation step. Block1004 may, at this stage, oxidize a portion 302 of the channel fin 106 bymasking the fin 106 and performing an oxidation process that penetratesthe channel fin 106 and the intermediate layer 104, electricallyisolating active regions of the channel fin 106. The mask 202 can thenbe removed.

Block 1006 then forms one or more dummy gate structures 402 across thechannel fin 106 and block 1008 forms spacer 404 on the dummy gatestructures 402. The dummy gate structures 402 may include a dummy gatedielectric layer and a dummy gate and may be formed by any appropriateprocess, such as photolithographic masking with an anisotropic etch or asidewall image transfer process. The spacer 404 can be formed from anyappropriate hardmask material and may be formed by a conformaldeposition process such as, e.g., CVD or ALD. In some embodiments, thespacer 404 may be removed from horizontal surfaces after deposition by atimed anisotropic etch that leaves the bulk of the material onhorizontal surfaces remaining.

After formation of the dummy gate structures, block 1010 may optionallyoxidize a portion 506 of the channel fin 106 by applying a mask 502 overthe fin 106. If multiple dummy gate structures 402 are formed, the mask502 may leave multiple such portions 506 exposed, separated by one ormore dummy gate structures 402. The mask 502 may thus cover one or moredummy gate structures 402, may cover all dummy gate structures 402, ormay leave all dummy gate structures 402 exposed. Block 1010 thenoptionally applies an oxidation process to change the material of thechannel fin 106 and the intermediate layer 104 into oxide 602, saidoxide 602 fully penetrating the channel fin 106 and intermediate layer104 to separate the channel fin 106 into multiple, electrically isolatedactive regions. The mask 502 can then be removed.

Block 1012 forms source/drain regions 702 on the channel fin 106. Thismay be accomplished by, e.g., epitaxially growing source/drainextensions on the channel fin 106 with in situ doping. In otherembodiments, the source/drain regions may be formed by implantingdopants directly into regions of the channel fin 106. At this stage,block 1013 may optionally apply an oxidation process to change materialof the channel fin 106 and intermediate layer 104 into oxide 1104, withthe oxide fully penetrating the channel fin 106 to separate the channelfin 106 into multiple, electrically isolated active regions. If theoptional oxidation of block 1013 is to be performed, then block 1012will include a masking step to cover a portion of the channel fin 106where the oxide will be formed, preventing the growth of source/drainstructures 702 on the channel fin 106 in the masked area. This preservesthe channel fin surfaces for subsequent oxidation.

Block 1014 then forms a passivating layer 704 over the source/drainregions 702 by depositing a durable, insulating material. The insulatingmaterial may include silicon dioxide that is deposited by a flowable CVDprocess, but it should be understood that other materials and depositionprocesses may be used instead. The insulating material may be depositedto a height that exceeds a height of the spacers 708 and may then bepolished down using, e.g., a chemical mechanical planarization processthat stops on the dummy gate structures 402. Block 1016 then removes thedummy gate structures 402, exposing areas of the channel fin 106.

Block 1018 may optionally oxidize regions of the channel fin 106 at thisstage. A mask 802 is formed over the channel fin 106, leaving portions804 exposed. The mask 802 may cover one or more source/drain regions702, may cover all source/drain regions 702, or may leave allsource/drain regions 702 exposed. Block 1018 then applies an oxidationprocess to change the material of the channel fin 106 and intermediatelayer 104 into oxide 902, said oxide 902 fully penetrating the channelfin 106 to separate the channel fin 106 into multiple, electricallyisolated active regions. The mask 802 can then be removed.

Block 1020 then forms gate stacks between source/drain regions 702. Thegate stacks include, e.g., a gate dielectric and a gate conductor, butmay also include a work function metal and other structures. The gatestacks may be formed by any appropriate processes, including sequentialdeposition steps by appropriate conformal or directional depositionprocesses. Block 1022 then forms conductive contacts to the gate stacksand to the source/drain regions 702. Block 1022 may therefore etch a viathrough the passivating layer 704 to reach the source/drain regions 702before depositing conductive material in the via.

Referring now to FIG. 12, a step in embodiments of an oxidation processis shown in a cross-section that is perpendicular to the perspectivetaken in FIGS. 1-9 and 11. The cross-section illustrates a slice of thechannel fin 106 and intermediate layer 104 taken after any of the stepsshown in FIG. 2, 5, or 7 as shown above or after the formation of thesource/drain regions 702, where the channel fin 106 is exposed by amask. In each of these cases, any sidewall material on the fins isremoved in the exposed area. The intermediate layer 104 is thinned inthe exposed region using any appropriate isotropic etch such as, e.g., awet or dry chemical etch that selectively removes the material of theintermediate layer 104 without substantially damaging the channel fin106, leaving thinned layer 1202.

Referring now to FIG. 13, a layer of oxide material 1302 is depositedover the channel fin 106 and the intermediate layer 104. It isspecifically contemplated that silicon dioxide may form the oxide layer1302 by a flowable CVD process, but it should be understood that anyappropriate oxide and deposition process may be used instead.

Referring now to FIG. 14, an anneal is performed that drives oxygen fromthe oxide layer 1302 into the channel fin 106 and the thinnedintermediate layer 1202. The oxidation of the channel fin 106,particularly in the case where silicon germanium is used as the channelmaterial, forms a silicon dioxide material and pushes the germaniumcontent of the channel fin 106 into neighboring portions of the fin thatwere not exposed. The thinned intermediate layer 1202 also converts tosilicon dioxide. Material is removed from the intermediate layer 104 toform the thinned intermediate layer 1202 due to the differing rates ofoxidation between silicon and silicon germanium. Embodiments that employother materials with similar oxidation rates may omit the thinning step.What remains is a purely oxide layer 1402 in the illustratedcross-section, while portions of the channel fin 106 and theintermediate layer 104 that were protected by a mask or by fin sidewallsare unharmed. This oxidation process fully penetrates both the channelfin 106 and the intermediate layer 104, whereas directional oxidationprocesses might not be able to reach all the way to the underlyingsubstrate 102.

The anneal that is used is specifically contemplated as being a steamanneal. The anneal may be performed in the presence of any gas thatincludes oxygen such as, e.g., steam, O₂, O₃, etc., at any appropriatetemperature and pressure suitable to cause oxygen to penetrate andoxidize exposed portions of the fin.

Having described preferred embodiments of fin isolation to mitigatelocal layout effects (which are intended to be illustrative and notlimiting), it is noted that modifications and variations can be made bypersons skilled in the art in light of the above teachings. It istherefore to be understood that changes may be made in the particularembodiments disclosed which are within the scope of the invention asoutlined by the appended claims. Having thus described aspects of theinvention, with the details and particularity required by the patentlaws, what is claimed and desired protected by Letters Patent is setforth in the appended claims.

What is claimed is:
 1. A method of forming an integrated chip,comprising: oxidizing a portion of a semiconductor fin, which includes achannel layer and an intermediate semiconductor layer, to electricallyisolate active regions of the semiconductor fin by forming an oxide thatfully penetrates the channel layer and the intermediate semiconductorlayer; and forming a semiconductor device on each of the active regions.2. The method of claim 1, wherein oxidizing the portion of thesemiconductor fin comprises a steam anneal process.
 3. The method ofclaim 1, wherein forming the semiconductor device on each of the activeregions comprises forming a dummy gate structure on the semiconductorfin.
 4. The method of claim 3, wherein oxidizing the portion of thesemiconductor fin is performed after forming the dummy gate structure.5. The method of claim 3, wherein forming the semiconductor device oneach of the active regions further comprises forming source and drainregions adjacent to the dummy gate structure.
 6. The method of claim 5,wherein oxidizing the portion of the semiconductor fin is performedafter forming the dummy gate structure and before forming the source anddrain regions.
 7. The method of claim 5, wherein forming thesemiconductor device on each of the active regions comprises removingthe dummy gate structure and forming a gate stack after forming thesource and drain regions.
 8. The method of claim 7, wherein oxidizingthe portion of the semiconductor fin is performed after removing thedummy gate structure and before forming the gate stack.
 9. The method ofclaim 7, wherein oxidizing the portion of the semiconductor fin isperformed after forming the source and drain regions and before removingthe dummy gate structure.
 10. The method of claim 1, further comprisingrecessing a shallow trench isolation layer between fins around theportion of the semiconductor fin.
 11. The method of claim 1, furthercomprising selectively isotropically etching the intermediatesemiconductor layer in the portion of the semiconductor fin to thin theintermediate semiconductor layer relative to the channel layer beforeoxidizing the portion of the semiconductor fin.
 12. A method of formingan integrated chip, comprising: forming a semiconductor fin thatincludes a silicon germanium fin formed on a silicon fin; selectivelyisotropically etching a portion of the silicon fin to thin the siliconthin relative to the silicon germanium fin; oxidizing a portion of thesilicon germanium fin and the thinned portion of the silicon fin toelectrically isolate active regions of the semiconductor fin withoutreleasing stress in the silicon germanium fin, completely penetratingthe portion of the silicon germanium fin and the silicon fin, such thatthe portion of the silicon germanium fin and the silicon fin isconverted to a dielectric material without any conductive path betweenthe active regions; and forming a semiconductor device on each of theactive regions.